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Growing Ingots

the ingot growth for multicrystalline silicon is quite simple, melt the silicon in a large crucible and let it cool slowly to form a large crystal. the specifics of furnace design allows the ingot to cool slowly so that very large grains (> 1 cm) are formed.

tub used for growing silicon. the dimensions are about 50 cm x 50 cm x 25 cm deep. the tub has to withstand the melting point of silicon at 1415 °c. for comparison iron melts at 1538 °c.

crystal growing furnaces. the system is loaded and unloaded using the hoists at the bottom.

loading the growth tub into the furnace.

finished silicon ingot.