the ingot growth for multicrystalline silicon is quite simple, melt the silicon in a large crucible and let it cool slowly to form a large crystal. the specifics of furnace design allows the ingot to cool slowly so that very large grains (> 1 cm) are formed.
tub used for growing silicon. the dimensions are about 50 cm x 50 cm x 25 cm deep. the tub has to withstand the melting point of silicon at 1415 °c. for comparison iron melts at 1538 °c.
crystal growing furnaces. the system is loaded and unloaded using the hoists at the bottom.
loading the growth tub into the furnace.
finished silicon ingot.